Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2014
ISSN: 1938-6737,1938-5862
DOI: 10.1149/06412.0011ecst